Yi-Hsuan is awarded the Outstanding Student Research Result for the following work:
Y.-H. Chen, C.-J. Su, C. Hu, and T.-L. Wu, "Effects of Annealing on Ferroelectric Hafnium Zirconium Oxide-Based Transistor Technology," IEEE Electron Device Letters, vol. 40, no. 3, pp. 467-470, Mar. 2019.
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