Outstanding Student Research Result

Yi-Hsuan is awarded the Outstanding Student Research Result for the following work:

Y.-H. Chen, C.-J. Su, C. Hu, and T.-L. Wu, "Effects of Annealing on Ferroelectric Hafnium Zirconium Oxide-Based Transistor Technology," IEEE Electron Device Letters, vol. 40, no. 3, pp. 467-470, Mar. 2019.