T.-L. Wu, “AI 與化合物半導體的雙向革新：AI 資料中心的能效突破與技術加速,” 800V 技術日：資料中心電力與測試挑戰 | Tektronix, Nov. 2025

T.-L. Wu, “Recent progress in GaN and SiC power technologies: toward high voltage in GaN power HEMTs and toward monolithic integration in SiC power MOSFETs,” International Electron Devices & Materials Symposium (IEDMS), 2025. (Invited talk)

T.-L. Wu, “Compound Semiconductor for AI & AI for Compound Semiconductor,” International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA), 2025. (Invited talk)

T.-L. Wu, “Compound Semiconductor for AI & AI for Compound Semiconductor,” 2025 Keysight AI/6G元件測試論壇

T.-L. Wu, “Reliability Challenges of GaN-on-Si RF Technologies,” GaN/Si: an Enabler for FR3 Applications Workshop, IEEE MTT-S International Microwave Symposium (IMS), 2025. (Invited talk)

T.-L. Wu, “Recent Progress in wide bandgap GaN/SiC/Ga2O3 power devices,” 5th Symposium on Nano-Device Circuits and Technologies (SNDCT), 2025. (Invited talk)

Jan. 2025 – IEEE International Nanoelectronics Conference (INEC) , Taipei, Taiwan
“Investigation of Gate Lifetime Using Different Time-to-Failure Criteria on SiC Planar and Trench MOSFETs”

Jan. 2025 - Interdisciplinary Exchange Workshop for Future of Taiwan and Japan (IEWF-TwJ), Hsinchu, Taiwan “Introduction to GaN/SiC power semiconductors”

Mar. 2024 – IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Biangular, India “High-Voltage and High-Frequency GaN HEMTs on Novel Substrates”

T.-L. Wu, “AI 2.0時代，寬能隙功率半導體如何把守能源效率關卡,” D Forum 電源技術論壇 - 高效電源轉換設計, 2024. (Invited talk)

Jul. 2022 – IEEE International Physical and Failure Analysis of Integrated Circuits (IPFA), Tutorial Speaker “Ferroelectric Device Reliability”

T.-L. Wu, “第三類半導體最新技術與挑戰,” D Webinar 化合物半導體論壇, 2022. (Invited talk)

T.-L. Wu, “Demonstration of GaN-on-Si and GaN-on-Si/poly-AlN power MIS-HEMTs with High Breakdown Voltage (>1700V) and Stable Dynamic On-resistance,” International Workshop on Physics of Semiconductor Devices (IWPSD), 2021. (Invited talk)