2026 IRPS

From SiC to power GaN, and further extending to RF GaN and ferroelectric device reliability, WLab is dedicated to reliability research and continues to explore innovative reliability testing methodologies and the underlying degradation mechanisms. Our goal is to develop effective strategies to overcome and mitigate the reliability limitations faced by next-generation compound semiconductors and emerging memory technologies.

WLab is honored to have six papers accepted by the 2026 IEEE International Reliability Physics Symposium (IRPS), covering research topics across SiC, power GaN, RF GaN, and ferroelectric technologies.

This marks not only the highest number of IRPS acceptances in our group’s history, but also the first time we systematically present SiC / GaN / ferroelectric device reliability analyses within a single IRPS edition.

The IEEE International Reliability Physics Symposium (IRPS) is one of the most prestigious and longest-running international conferences in the field of semiconductor reliability and failure physics. IRPS has long focused on reliability issues spanning device, process, material, and system levels, covering CMOS, memory technologies, SiC, GaN, RF devices, advanced packaging, and emerging materials.

Unlike general device or circuit conferences, IRPS emphasizes a physics-based understanding of reliability, going beyond measurement results to deeply investigate degradation origins, failure pathways, and predictive models. As a result, IRPS is highly regarded by academia, foundries, IDMs, and system companies.

Many industry reliability standards, test methodologies, and lifetime models were first proposed and validated at IRPS. For advanced technology nodes, wide-bandgap semiconductors (SiC/GaN), and emerging memory devices such as ferroelectrics, IRPS serves as a critical platform for technical exchange and roadmap alignment.

We will continue to deepen our efforts in reliability physics, explore innovative measurement techniques and degradation mechanisms, and look forward to sharing these new insights with the global community at IRPS 2026.

The following papers will be presented at IRPS 2026: [1]  H.-Y. Liu, W.-C. Peng, C.-Y. Lin, T.-L. Wu, "Investigation of Read-Speed Limitation and Switching Dynamics of Ferroelectric Capacitors for Capacitor-Mode Compute-in-Memory Applications," IEEE International Reliability Physics Symposium (IRPS), 2026.

[2]  P.-J. Wang, C.-C. Lee, Z.-H. Huang, Y.-T. Lee, T.-L. Wu, "Gate Trapping-Induced Dynamic RON Degradation in p-GaN Power HEMTs under Continuous Hard Switching," IEEE International Reliability Physics Symposium (IRPS), 2026.

[3]  A. Navolotskaia, H. Yu, Y.-C. Kuo, Y. Yang, C.-Y. Huang, W-.T. Lin, Y. Chong, B. O'Sullivan, A. Rathi, A. Gupta, A. Alian, U. Peralagu, B. Parvais, N. Collaert, T.-L. Wu, "Understanding Gate Breakdown Mechanisms in RF GaN MISHEMTs with thin gate SiN," IEEE International Reliability Physics Symposium (IRPS), 2026.

[4]  H. Yu , A. Gupta, Y.-C. Kuo,  Y. Chong, T.-L. Wu, S. Yadav, R. ElKashlan, S. Banerjee, A. Rathi, W.-M. Wu, B. Kazemi Esfeh, E. Bury, B. Vermeersch, B. O’Sullivan, A. Alian, M. Asad, U. Peralagu, B. Parvais, and N. Collaer, "Dynamic On-State Breakdown of GaN-on-Si HEMT," IEEE International Reliability Physics Symposium (IRPS), 2026.

[5] W.-C. Lin, Y.-J. Chiu, S. Soo, G.-H. Liu, S. Elangovan, S.-S. Yeh, C.-L. Hung, Y.-K. Hsiao, H.-C. Kuo, T.-L. Wu, "Toward Understanding Non–Impact-Ionization-Induced Time-Dependent Gate Current Decrease in 4H-SiC MOSFETs via Charge Pumping," IEEE International Reliability Physics Symposium (IRPS), 2026.

[6] C.-Y. Chang, Y.-T. Tso, C.-W. Hsiung, Y.-C. Peng, T.-S. Huang, M.-J. Tsai, M.-C. Tsou, M.-N. Chuang and T.-L. Wu, "Enhancing VF and RON Stability in 650-V AlGaN/GaN Schottky Barrier Diode with Anode p-GaN Edge Termination on GaN-on-Si Platform," IEEE International Reliability Physics Symposium (IRPS), 2026.