USA

[1] Tian-Li Wu, Hung-Chun Chen, Tzu-Heng Lin, "p-GaN Semiconductor Device and Method for Fabricating the same" U.S. Patent US 2025/0318247 A1, filed on July. 16, 2024.

[2] Rustam Kumar, Tian-Li Wu, "Dynamic On-Resistance And Threshold Voltage Instability Evaluation Circuit For Power Devices And Operation Method Thereof, " U.S. Patent US 2025/0298068 A1, filed on Mar. 20, 2024.

[3] Tian-Li Wu, Yen-Wei Liu, "Group III-N Based Semiconductor Three-Dimensional Integrated Circuit" US 2024/0120333 A1, filed on Dec 27, 2022. 

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Taiwan

[1] 吳添立、陳泓君、林子恒, "P型氮化鎵半導體裝置及其製作方法" 中華民國發明專利發明第 894905 號, filed on Apr. 09, 2024, Issued Date: Aug. 21, 2025.

[2] 盧斯坦、吳添立, "功率元件之動態導通電阻與臨界電壓不穩定性之量測電路及其操作方法" 中華民國發明專利發明第 883950號, filed on May. 10, 2024, Issued Date: May 11, 2025.

[3] 吳添立、劉彥葳, "三族氮化物半導體三維積體電路" 中華民國發明專利發明第 I838903號, filed on Oct. 07, 2022, Issued Date: April 11, 2024