“Research is creating new knowledge”
-Neil Amstrong, the first person to walk on the Moon

2023

[J69]  R. Kumar and  T.-L. Wu, "Dynamic On-Resistance and Threshold Voltage Instability Evaluation Circuit for Power GaN HEMTs Devices," IEEE Transactions on Industrial Electronics (accepted) (IF=7.7)

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[J68]  W.-C. Lin, W.-C. Yu, B.-R. Chen, Y.-S. Hsiao, Z.-H. Huang, C.-L. Hung, Y.-K. Hsiao, N.-J. Yeh, H.-C. Kuo, C.-C. Tu, and T.-L. Wu, " Investigation of the Time Dependent Gate Dielectric Stability in SiC MOSFETs with Planar and Trench Gate Structures," Microelectronics Reliability, Oct. 2023.

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[J67]  Z.-H. Huang, T.-Y. Yang, J.-S. Wu, Y.-K. Liang, J.-F. Hsu, W.-C. Lin, T.-L. Wu, and E. Y. Chang, " Investigation of Time-Dependent Gate Dielectric Breakdown in Recessed E-Mode GaN MIS-HEMTs Using Ferroelectric Charge Trap Gate Stack (FEG-HEMT)," Microelectronics Reliability, Oct. 2023.

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[J66] W.-M. Wu, S.-H. Chen, C.-A. Shih, B. Parvais, N. Collaert, M.-D. Ker, T.-L. Wu, and G. Groeseneken, “ON-state Human Body Model ESD Failure Mechanisms in GaN-on-Si RF MIS-HEMTs,” IEEE Electron Device Letters, vol. 44, no 8, pp. 1248-1251, Aug. 2023.

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[J65] T.-Y. Chang, K.-C. Wang, H.-Y. Liu, J.-H. Hseun, W.-C. Peng, N. Ronchi, U. Celano, K. Banerjee, J. V. Houdt, and T.-L. Wu, “Comprehensive Investigations of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-doped and Si-doped HfO2 Metal-Ferroelectric-Metal Memory,” Nanomaterials, July, 2023. (IF=5.3)

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[J64] M. R. Sk, S. Thunder, F. Muller, N. Laleni, Y. Raffel, M. Lederer, L. Pirro, T. Chohan, J.-H. Hsuen, T.-L. Wu, K. Seidel, T. Kampfe, S. De, and B. Chakrabarti, “1F-1T Array: Current Limiting Transistor Cascoded FeFET Memory Array for Variation Tolerant Vector-Matrix Multiplication Operation,” IEEE Transactions on Nanotechnology, vol. 22, pp. 424-429, July 2023.

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[J63] Y.-M. Tseng, B.-R. Chen, W.-C. Lin, W.-J. Lee, N.-Y. Chen, and T.-L. Wu, “Using Graph Attention Network to Reversely Design GaN MIS-HEMTs based on Hand-drawn Characteristics,” IEEE Access, vol. 11, pp. 70168-70173, July 2023.

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[C61]  T.-H. Lin, Y.-S. Chou, H.-C. Chen, and T.-L. Wu, "Demonstration of High Voltage GaN-on-Si p-GaN gate HEMTs (>1000V) with Enhancement of Forward Gate TDDB using Oxygen Plasma Treatment," IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia), 2023.

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[C60]  C.-W. Liu, Y.-W. Liu, H.-J. Ho and T.-L. Wu, "Demonstration of High Voltage (>2KV) GaN-on-QST power MIS-HEMTs with the Stable Dynamic On-resistance up to 1650 V," IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia), 2023. 

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[J62] S. T. Ngo, C.-H. Lu, F.-G. Tarntair, S.-T. Chung, T.-L. Wu, and R.-H. Horng, “Demonstration of MOCVD-grown Ga2O3 power MOSFETs on Sapphire with in-situ Si-doped by Tetraethyl Orthosilicate (TEOS),” Discover Nano (formerly Nanoscale Research Letters), May 2023..

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[J61]  C.-H. Huang, C.-Y. Weng, K.-H. Chen, Y. Chou, T.-L. Wu, and Y.-C. Chou, “Multiple-State Nonvolatile Memory Based on Ultrathin Indium Oxide Film via Liquid Metal Printing,” ACS Applied Materials & Interfaces, vol. 15 pp. 25838−25848, May 2023.

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[J60]  Z.-H. Huang, S.-W. Tang, C.-T. Fan, M.-C. Lin, and T.-L. Wu, “Dynamic On-Resistance Stability of SiC and GaN Power Devices During High-Frequency (100–300 kHz) Hard Switching and Zero Voltage Switching Operations,” Microelectronics Reliability, vol. 145, June 2023.

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[C59]  Z.-H. Huang, C.-H. Chang, W.-S. Lin, T.-C. Lo, Y.-C. Ching, Y.-J. Huang, R. C. Hwang, C.-W. Chou, and T.-L. Wu, “Effects of N2 Pretreatment on Performance and Stabilities of Power p-GaN HEMTs,” 30th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2023.

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[J59]  R. Kumar, S. Samanta, and T.-L. Wu, “Threshold Voltage Instability Measurement Circuit for Power GaN HEMTs Devices,”IEEE Transactions on Power Electronics, vol. 38,  no. 6., pp.6891-6896, June 2023. (IF=6.7)

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[J58]  J.-W. Hu, P.-C. Huang, P.-W. Huang, J.-Y. Jiang, C.-F. Huang, and T.-L. Wu, “Toward Understanding Thickness Dependence on  Dielectric Breakdown Mechanism Under Forward Gate Bias in 4H-SiC MOS Technologies,” IEEE Transactions on Electron Devices, vol. 70,  no. 4., pp. 2175-2178, April 2023. 

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[C58]  Z.-H. Huang, W.-S. Lin, T.-C. Lo, S.-W. Tang, S.-C. Chen, D. Wellekens, M. Borga, N. Posthuma, B. Bakeroot, S. Decoutere, and T.-L. Wu, " Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs," 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023.

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[C57]  T. T. Tan, Y.-Y. Wang, J. Tan, T.-L. Wu, N. Raghavan and K. L. Pey, “A New Methodology to Precisely Induce Wake-Up for Reliability Assessment of Ferroelectric Devices,” IEEE International Reliability Physics Symposium (IRPS), 2023. 

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[C56]  C.-Y. Su, M.-C. Tsai, and T.-L. Wu, "DC/RF Performance and Reliability of 100-nm Gate Length AlGaN/GaN MIS-HEMTs with Different Thickness of in-situ SiN,"International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2023.

 

[C55]  V. Parmar, F. Müller, J.-H. Hsuen, S. K. Kingra, Y. Raffel, M. Lederer, T. Ali, S. Dünkel, S. Beyer, T.-L. Wu, T. Kämpfe, S. De, and M. Suri, "Demonstration of Differential Mode FeFET-Array for multi-precision storage and IMC applications, "International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2023.  

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[C54]  J.-H. Hsuen, M. Lederer, L. Kerkhofs, Y. Raffel, L. Pirro, T. Chohan, T. Kämpfe, S. De,  and T.-L. Wu, "Demonstration of Large Polarization in Si-doped HfO2 Metal–Ferroelectric–Insulator–Semiconductor Capacitors with Good Endurance and Retention,"International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2023. 

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[J57] A. Sood, D.-S. Wuu, F.-G. Tarntair, N. T. Sao, T.-L. Wu, N. Tumilty, H.-C. Kuo, S. J. Pratap, R.-H. Horng, “Electrical performance study of Schottky barrier diodes using ion implanted β-Ga2O3 epilayers grown on sapphire substrates,” Materials Today Advances, vol. 17, Mar. 2023.

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[J56]  V. Parmar, F. Mnuller, J.-H. Hsuen, S. K. Kingra, N. Laleni, Y. Raffel, M. Lederer, A. Vardar, K. Seidel, T. Soliman, T. Kirchner, T. Ali, S. Dünkel, S. Beyer, T.-L. Wu,  S. De,  M. Suri, and T. Kämpfe, “Demonstration of Differential Mode Ferroelectric Field-Effect Transistor Array-Based in-Memory Computing Macro for Realizing Multiprecision Mixed-Signal Artificial Intelligence Accelerator,” Advanced Intelligent Systems, pp. 2200389, Feb. 2023. (IF=7.4) 

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[J55]  Y.-L. Shen, C.-Y. Chang, P.-L. Chen, C.-C. Tai, T.-L. Wu, Y.-R. Wu, and C.-F. Huang, “Study on the Effects of Quantum Well Location on Optical Characteristics of AlGaN/GaN Light-Emitting HEMT,” Micromachines, Feb. 2023.

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[J54] S.-W. Tang, B. Bakeroot, Z.-H. Huang, S.-C. Chen, W.-S. Lin, T.-C. Lo, M. Borga, D. Wellekens, N. Posthuma, S. Decoutere, and T.-L. Wu, “Using Gate Leakage Conduction to Understand Positive Gate Bias induced Threshold Voltage shift in p-GaN gate HEMTs,” IEEE Transactions on Electron Devices, pp. 449-453, vol. 70, no. 2, Feb. 2023.

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[J53] R. Kumar, A. Sarkar, S. Anand, A. Verma, and T.-L. Wu, “H-Bridge Derived Topology for Dynamic on-resistance Evaluation in Power GaN HEMTs,” IEEE Transactions on Industrial Electronics, pp. 1532-1541, vol. 70, no. 2, Feb. 2023. (IF=7.7)

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2022

[C53] S. Abhinay, W.-M. Wu, C.-A. Shih, S.-H. Chen, A. Sibaja-Hernandez, B. Parvais , U. Peralagu, A. Alian, T.-L. Wu, M.-D. Ker, G. Groeseneken, and N. Collaert, “Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs,” IEEE International Electron Device Meeting (IEDM), 2022.

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[J52] C.-Y. Chang, Y.-L. Shen, S.-W. Tang, T.-L. Wu, W.-H. Kuo, S.-F. Lin, Y.-R. Wu, and C.-F. Huang, “Process improvement of p-GaN HEMTs with a u-GaN etching buffer layer inserted,”Applied Physics Express, vol. 15, no. 11, Nov. 2022.

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[J51] Y.-Y. Wang, K.-C. Wang, T.-Y. Chang, N. Ronchi,B. O. Sullivan, K. Banerjee, G. Van den Bosch, J. Van Houdt, and T.-L. Wu, "Relaxation Analysis to understand Positive Bias Induced Trapping in Ferroelectric FETs with Si and Gd Dopants," Microelectronics Reliability, vol. 138, Nov, 2022.

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[J50] K. Kumar, C.-H. Lo, C.-C. Chang, T.-L. Wu, K.-H. Kao, and Y. -H. Wang, "Impacts of material parameters on breakdown voltage and location for power MOSFETs," Journal of Computational Electronics, vol. 21, pp. 1163–1165, Oct. 2022.

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[J49] S.-W. Tang, W.-S. Lin, Z.-H. Huang, and T.-L. Wu, "Capacitance-Dependent VTH Instability under a High dVg/dt event in p-GaN Power HEMTs," IEEE Electron Device Letters, vol. 43, no. 10, pp. 1617 - 1620, Oct. 2022.

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[J48] S.-W. Tang, Z.-H. Huang, S.-C. Chen, W.-S. Lin, B. De Jaeger, D. Wellekens, M. Borga, B. Bakeroot, S. Decoutere, and T.-L. Wu, "High Threshold Voltage Enhancement-mode Regrown p-GaN gate HEMTs with a Robust Forward Time-Dependent Gate Breakdown Stability," IEEE Electron Device Letters, vol. 43, no. 10, pp.1625-1628,Oct. 2022.

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[C52] Y.-L. Shen, C.-Y. Chang, P.-L. Chen, C.-C. Tai, T.-L. Wu, Y.-R. Wu, and C.-F. Huang, "Study on the Optical Characteristics of Light-Emitting HEMT with Different Quantum Well Locations," International Conference on Solid State Devices and Materials (SSDM), 2022.

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[C51] R. Kumar, S. Samanta, and T.-L. Wu, " Comprehensive Study on Dynamic on-resistance Evaluation Circuit for Power GaN HEMTs Devices, " 48th Annual conference of IEEE Industrial Electronics Society (IECON), 2022.

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[C50] J.-W. Hu, T.-Y. Lu, Y.-C. Huang, F.-J. Hsu, C.-F. Huang, T.-L. Wu, and F. Zhao, "Performance and Reliability Evaluation of Tri-gate NMOSFET in 4H-SiC, " International Conference on Silicon Carbide and Related Materials (ICSCRM), 2022.

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[C49] O. Syshchyk, T. Cosnier, Z.-H. Huang, D. Cingu, A.Vohra, K. Geens, P. Vudumula, U. Chatterjee, S. Decoutere, T.-L. Wu, and B. Bakeroot, "Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits," 52nd IEEE European Solid-State Device Research Conference (ESSDERC), 2022.

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[J47] J. O Gallardo, S. Dash, TN Tran, Z.-H. Huang, S. -W. Tang, D. Wellekens, B. Bakeroot, O. Syshchyk, B. De Jaeger, S. Decoutere, and T.-L . Wu, " Demonstration of Schottky Barrier Diode Integrated in 200V power p-GaN HEMTs Technology with Robust Stability," Microelectronics Reliability,vol. 134, July. 2022.

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[C48] B.-Y. Wang, C.-Y. Su, and T.-L. Wu, " Demonstration of Patterned GaN RF MIS-HEMTs Growing on Hybrid Oriented Silicon-on-Insulator (SOI) Substrates, " 80th Device Research Conference (DRC), 2022.

 

[C47] S.-W. Tang, C.-T. Fan, M.-C. Lin, and T.-L. Wu, "Comprehensive Investigation of the Switching Stability in SiC and GaN Power Devices, " 29th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits(IPFA), 2022.

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[J46] N. Q. Khoi, Y.-J. Lin, C. Sun, X.-H. Lee, S.-K. Lin, C.-S. Wu, T.-H. Yang, T.-L. Wu, T.-X. Lee, C.-H. Chien, Y.-W. Yu, and C.-C. Sun, " GaN-based mini-LED matrix applied to multi-functional forward lighting," Scientific Reports, vol. 12, April. 2022.

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[C46] M.-C. Lin, C.-T. Fan, S.-W. Tang, T.-L. Wu, and C.-F. Huang, "Novel Topology with Continuous Switching to Comprehensively Characterize Trapping-induced Dynamics in GaN Power Devices, " 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022.

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[J45] C.-H. Wu, N. Ronchi, K.-C. Wang, Y.-Y. Wang, S. McMitchel, K. Banerjee, G. Van den Bosch, J. Van Houdt, and T.-L. Wu , "Impacts of Pulsing Schemes on the Endurance of Ferroelectric Metal–Ferroelectric–Insulator–Semiconductor Capacitors ," IEEE Journal of the Electron Devices Society, vol. 10, pp. 109-114, Feb.2022.

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[J44] C.-H. Wu, K.-C. Wang, Y.-Y. Wang, C. Hu, C.-J. Su, and T.-L. Wu ,"Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric -Insulator Technologies by Using a Strained TiN Electrode ," Nanomaterials,Jan. 2022. (IF=5.076)

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[C45] Y.-Y. Wang, K.-C. Wang, C.-H. Wu, T.-Y. Chang, N. Ronchi, K. Banerjee, G. Van den Bosch, J. Van Houdt, and T.-L. Wu, " Demonstration of 64 Conductance States and Large Dynamic Range in Si-doped HfO2 FeFETs under Neuromorphic Computing Operations, "International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA),2022.

 

2021

[J43] S.-W. Tang, P.-Y. Yao, D.-S. Chao, T.-L. Wu, and H.-M. Hsu , "Stability of Wireless Power Transfer using Gamma-ray Irradiated GaN Power HEMTs ," Microelectronics Reliability, vol. 126, Nov. 2021.

 

[J42] J.-W. Hu, J.-Y. Jiang, W.-C. Chen, C.-F. Huang, T.-L. Wu, K.-Y. Lee, B.-Y. Tsui, "1100 V, 22.9 mΩcm2 4H-SiC RESURF Lateral Double-implanted MOSFET with Trench Isolation," IEEE Transactions on Electron Devices, vol. 68, no. 10., pp. 5009-5013, Oct. 2021&nbsp;.

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[J41] S.-W. Tang, S.-C. Chen, and T.-L. Wu, "Analysis of the Subthreshold Characteristics in AlGaN/GaN HEMTs with a p-GaN Gate," Microelectronics Reliability, vol. 126, Nov. 2021.

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[J40] C.-Y. Chang, Y.-L. Shen, C.-Y. Wang, S.-W. Tang, T.-L. Wu, W.-H. Kuo, S.-F. Lin, and C.-F. Huang, "Investigation on Stability of p-GaN HEMTs With an Indium-Tin-Oxide Gate Under Forward Gate Bias," IEEE Journal of the Electron Devices Society, vol. 9, pp. 687-690, 2021.

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[C44]C.-H. Wu, K.-C. Wang, Y.-Y. Wang, T.-L. Wu, C.-J. Su, Y.-J. Lee, and C. Hu, "Enhancement of Ferroelectricity in 5-nm HZO Metal-Ferroelectric-Insulator-Semiconductor Technologies by Using Strained TiN Electrode, " International Conference on Solid State Devices and Materials (SSDM), 2021.

 

[J39] B.-Y. Tsui, Y.-T. Huang, T.-L. Wu, and C.-H. Chien, " Time-Dependent Dielectric Breakdown of Gate Oxide on 4H-SiC with Different Oxidation Processes," Microelectronics Reliability, vol. 123, August, 2021.

 

[J38] S.-W. Tang, Z.-H. Huang, Y.-C. Chen, C.-H. Wu, P.-H. Lin, Z.-C. Chen, M.-H. Lu, K.-H. Kao, and T.-L. Wu, "Investigation of the Passivation-induced VTH Shift in p-GaN HEMTs with Au-free Gate-first Process ," Microelectronics Reliability, pp. 114150, vol. 122, July, 2021.

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[C43]JO Gallardo, B. De Jaeger, S. Dash, S.-W. Tang., D. Wellekens, B. Bakeroot, S. Decoutere, and T.-L. Wu, &quot;&nbsp;Stability of Schottky Barrier Diode integrated in p-GaN Enhancement-mode GaN power Technology&nbsp;,&quot;&nbsp;IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits(IPFA), 2021.

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[C42]C.-Y. Chang, K.-J. Wu, Y.-L. Shen, T.-L. Wu, W.-H. Kuo, S.-F. Lin, and C.-F. Huang, “Fabrication of Light-Emitting AlGaN/GaN High Electron Mobility Transistors with a Single Quantum Well Inserted,” in Proc. Device Research Conference (DRC), 2021

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[C41]&nbsp;J.-W. Hu, J.-Y. Jiang, P.-W. Huang, C.-F. Huang, S.-W. Tang, Z.-H. Huang, T.-L. Wu, and K.-Y. Lee, “1.2 kV 4H-SiC VDMOSFETs with Si-implanted Surface: Performance Enhancement and Reliability Evaluation,” in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 211-214, 2021.

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[J37] N. Modolo, S.-W. Tang, H.-J. Jiang, C. Santi, M. Meneghini, and T.-L. Wu, “A novel physics-based analytical approach to analyze and model enhancement -mode p-GaN power HEMTs,”IEEE Transactions on Electron Devices, vol. 68, no. 4, pp. 1489-1494, April. 2021.

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[J36] C.-Y. Chang, C.-S. Wang, C.-Y. Wang, Y.-L. Shen, T.-L. Wu, W.-H. Kuo, S.-F. Lin and C.-F. Huang, “Demonstration of p-GaN/AlGaN/GaN High Electron Mobility Transistors With an Indium–Tin–Oxide Gate Electrode,”IEEE Journal of the Electron Devices Society, vol. 9, pp. 2-5, 2021.

 

[C40] C.-H. Wu, A. Useinov, T.-L. Wu, and C.-J. Su, “Ferroelectric Characterization in Ultrathin Hf0.5Zr0.5O2 MFIS Capacitors by Piezoresponse Force Microscopy (PFM) in Vacuum ,” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA),2021.

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[J35] C.-Y. Chang, C.-T. Hsu, Y.-L. Shen, T.-L. Wu, W.-H. Kuo, S.-F. Lin, and C.-F . Huang, “Fully Transparent AlGaN/GaN High Electron Mobility Transistors Fabricated with Indium-Tin-Oxide Electrodes,” IEEE Electron Device Letters, vol. 42, no. 2, pp. 144-147, Feb. 2021.

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2020

[C39] M.-H. Yan, M.-H. Wu, H.-H. Huang, Y.-H. Chen, Y.-H. Chu, T.-L. Wu, P.-C. Yeh, C.-Y. Wang, Y.-D. Lin, J.-W. Su, P.-J. Tzeng, S.-S. Sheu, W.-C. Lo, C.-I. Wu , and T.-H. Hou, “BEOL-Compatible Multiple Metal-Ferroelectric-Metal (m-MFM) FETs Designed for Low Voltage (2.5 V), High Density, and Excellent Reliability,” IEEE International Electron Device Meeting (IEDM), 2020.

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[J34] T.-L. Wu and S. Kutub, “Machine Learning-Based Statistical Approach to Analyze Process Dependencies on Threshold Voltage in Recessed Gate AlGaN/GaN MIS-HEMTs, ”IEEE Transactions on Electron Devices, vol. 67, no. 12, pp. 5448-5453, Dec. 2020. &nbsp;

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[C38] C.-Y. Chang, K.-J. Wu, C.-Y. Wang, Y.-L. Shen, C.-T. Hsu, T.-L. Wu, C.-F. Huang, “The Characteristics of Light-Emitting HEMT with Single Quantum Well Inserted,” International Conference on Solid State Devices and Materials (SSDM), 2020.

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[J33] C. Sharma, R. Singh, D.-S. Chao, and T.-L. Wu, &quot;Effects of γ -Ray Irradiation on AlGaN/GaN Heterostructures and High Electron Mobility Transistor Devices,&quot;Journal of Electronic Materials, 2020. 

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[J32] P. Das, T.-L. Wu, and S. Tallur, &quot;Design and analysis of high electron mobility transistor (HEMT) inspired III-V electro-optic modulator topologies,&quot;_cc781905-5cde-3194-bb3b- 136bad5cf58d_Semiconductor Science and Technology,vol. 35, pp. 095028, Aug. 2020. &nbsp;

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[C37] S.-W. Tang, SB Kutub, and T.-L. Wu, “Robust Forward Gate Bias TDDB Stability in Enhancement-mode Fully Recessed Gate GaN MIS-FETs with ALD Al2O3 Gate Dielectric,” IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits(IPFA), 2020.

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[C36] Y.-C. Chen, S.-W. Tang, P.-H. Lin, Z.-C. Chen, M.-H. Lu, K.-H. Kao, and T.-L . Wu, “Silicon Nitride-induced VTH Shift in p-GaN HEMTs with Au-free Gate-first Process,” IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2020.

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[C35] U. Celano, Y.-H. Chen, A. Minj, K. Banerjee, N. Ronchi, S. McMitchell, P. Van Marcke, P. Favia, T.-L. Wu, B. Kaczer, G. Van den Bosch, J. Van Houdt, and P. van der Heide, “Probing the evolution of electrically active defects in doped ferroelectric HfO2 during wake-up and fatigue,” IEEE Symp. on VLSI Technology, 2020.

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[J31] Y.-H. Chen, C.-J. Su, T.-H. Yang, C. Hu, and T.-L. Wu, “Improved TDDB Reliability and Interface States in 5 nm Hf0.5Zr0. 5O2 Ferroelectric Technologies using NH3 Plasma and Microwave Annealing,” IEEE Transactions on Electron Devices,vol. 67, no. 4, pp. 1581-1585, Apr. 2020.

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[J30] J.-Y. Jiang, T.-L. Wu, F. Zhao, and C.-F. Huang, “Numerical Study of 4H-SiC UMOSFETs with Split-gate and P-shielding,” Energies, vol.13, no. 1122, 2020.

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[J29] T.-L. Wu , S.-W. Tang, and H.-J. Jiang, “Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-mode Characteristic,” Micromachines, vol. 11, no. 2, pp. 163, Feb. 2020.

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[C34] SB Kutub, H.-J. Jiang, N.-Y. Chen, W.-J. Lee, C.-Y. Jui, and T.-L. Wu​, “Artificial Neural Network (ANN)-Based Approach for Characteristics Modeling and Prediction in GaN-on-Si Power Devices,” in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 529-532, 2020.

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[J28] C. Sharma, N. Modolo, T.-L. Wu, M. Meneghini, G. Meneghesso, E. Zanoni, A. Kumar Visvkarma, S. Vinayak, and R. Singh, “Understanding γ ray Induced Instability in AlGaN/GaN HEMTs using a Physics based Compact Model,” IEEE Transactions on Electron Devices, vol. 67, no. 3, pp. 1126-1131, Mar. 2020.

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[J27] T.-H. Yang, C.-J. Su, Y.-S. Wang, K.-H. Kao, Y.-J. Lee, and T.-L. Wu, “Impact of the Polarization on Time-Dependent Dielectric Breakdown in Ferroelectric Hf0.5Zr0.5O2 on Ge Substrates,” Japanese Journal of Applied Physics, vol. 59, SGGB08, 2020.

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[J26] J.-Y. Jiang, J.-Q. Hung, P.-W. Huang, T.-L. Wu, and C.-F. Huang, “Study on the Effects of Si Implantation on the Interface of 4H-SiC MOSFET,” Japanese Journal of Applied Physics, vol. 59, SGGD06, 2020.

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2019

[J25] C. Liu, Y.-C. Tung, T.-L. Wu, C.-H. Cheng, C.-Y. Tseng, H.-H. Chen, H.-H. Chen, J . Ma, C.-L. Lin, Z.-W. Zheng, W.-C. Chou, and H.-H. Hsu, “Gamma-Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides,” Physica status solidi (RRL)- Rapid Research Letters, pp. 1900414, Sept. 2019.

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[J24] C. Sharma, N. Modolo, H.-H. Chen, Y.-Y. Tseng, S.-W. Tang, M. Meneghini, G. Meneghesso, E. Zanoni, R. Singh, and T .-L. Wu, “Investigation of the Degradations in Power GaN-on-Si MIS-HEMTs subjected to the cumulative γ-ray Irradiation,” Microelectronics Reliability, vol. 100, Sept. 2019.

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[J23] Y.-H. Chen, C.-J. Su, C. Hu, and T.-L. Wu, “Effects of Annealing on Ferroelectric Hafnium Zirconium Oxide-Based Transistor Technology,” IEEE Electron Device Letters, vol. 40, no. 3, pp. 467-470, Mar. 2019.

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[C33] J.-Y. Jiang, J.-Q. Hung, P.-W. Huang, T.-L. Wu, and C.-F. Huang, “Study on the Influence of Si implantation on the Surface of SiC DIMOS,” International Conference on Silicon Carbide and Related Materials (ISCSRM), 2019.

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[C32] T.-H. Yang, C.-J. Su, Y.-S. Wang, K.-H. Kao, Y.-J. Lee and T.-L. Wu, “Polarization Dependency of Time -Dependent Dielectric Breakdown (TDDB) Characteristics in Ferroelectric HfZrOx,” International Conference on Solid State Devices and Materials (SSDM), 2019.

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[C31] J.-Y. Jiang, J.-Q. Hung, P.-W. Huang, T.-L. Wu, and C.-F. Huang, ”Study on the Effects of Si Implantation on the Interface of 4H-SiC MOSFET,” International Conference on Solid State Devices and Materials (SSDM), 2019.

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[C30] Y.-T. Tang, C.-L. Fan, Y.-C. Kao, N. Modolo, C.-J. Su, T.-L. Wuet al., “A Comprehensive Kinetical Modeling of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Energy Effects on Negative Capacitance FETs,” 2019 IEEE Symp. on VLSI Technology. 

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[C29] T.-L. Wu, Y.-Y. Tseng, C.-F. Huang, Z.-S. Chen, C.-C. Lin, C.-J. Chung, P.-K. Huang, and K.-H. Kao, &quot;Demonstration of Annealing-free Metal-Insulator-Semiconductor (MIS) Ohmic Contacts on a GaN Substrate using Low Work-function Metal (Yb) and Al2O3 Interfacial Layer,” IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia), 2019.

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[C28] J.-Y. Jiang, C.-F. Huang, T.-L. Wu, and F. Zhao, &quot;Simulation Study of 4H-SiC Trench MOSFETs with Various Gate Structures,” in Proc. IEEE Electron Devices Technology and Manufacturing (EDTM), pp. 401-403, 2019.

 

2018

[C27] Y.-H. Chen, C.-J. Su, C. Hu, and T.-L. Wu, &quot;Impact of the Annealing Temperature on CV Characteristics of Ferroelectric HfZrOx on a p-type Si Substrate,” IEEE Semiconductor Interface Specialists Conference (SISC), 2018.

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[C26] Y.-T. Tang, C.-J. Su, Y.-S. Wang, K.-H. Kao, T.-L. Wu et al., &quot;A Comprehensive Study of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Layer Effects on Negative Capacitance FETs for Sub-5 nm Node,” in Proc. IEEE Symp. on VLSI Technology, pp. 45-16, 2018.

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[C25] C.-Y. Yang, T.-L. Wuet al., &quot;Investigation of degradation phenomenon in GaN-on-Si power MIS-HEMTs under source current and drain bias stresses,” in Proc. IEEE International Reliability Physics Symposium (IRPS), pp. P-WB. 5-1-P-WB. 5-4, 2018.&nbsp;

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2017

[J22] T.-L. Wu, B. Bakeroot, H. Liang, N. Posthuma, S. You, N. Ronchi, S. Stoffels, D. Marcon, and S. Decoutere, &quot;Analysis of the Gate Capacitance- Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures,” IEEE Electron Device Letters, vol. 38, no. 12, pp.1696-1699, Dec. 2017.

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[J21] N. Ronchi, B. Bakeroot, S. You, J. Hu, S. Stoffels, T.-L. Wu, B. De Jaeger and S. Decoutere, “Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs,” Physica Status Solidi A, no. 3, 2017.

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[C24] J.-M. Zhang, T.-E. Hsieh, T.-L. Wu&nbsp;et al., “Bias- and Temperature-Assisted Trapping/De-trapping of RON Degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate,” in Proc. International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp. 1-4, 2017.

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[C23] S. Stoffels, B. Bakeroot, T.-L. Wu, D. Marcon, NE Posthuma, S. Decoutere, AN Tallarico, and C. Fiegna, “Failure Modes for p-GaN gates with varying active Mg concentration subject to forward gate stress,” in Proc. IEEE International Reliability Physics Symposium (IRPS), pp. 4B.4.1 - 4B.4.9, 2017.

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2016

[J20] M. Ruzzarin, M. Meneghini, I. Rossetto, M. Van Hove, S. Stoffels, T.-L. Wu, S. Decoutere, G. Meneghesso, and E. Zanoni, “Evidence of Hot-Electron Degradation in GaN-based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress, ”IEEE Electron Device Letters, vol. 37, no. 11, pp. 1415-1417, Nov. 2016.

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[J19] I. Rossetto, M. Meneghini, V. Rizzato, S. Stoffels, M. Van Hove, N. Posthuma, T.-L. Wu, D. Marcon, S. Decoutere, G. Meneghesso and E. Zanoni , &quot;Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis,” Microelectronics Reliability, Sept. 2016.

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[J18] M. Meneghini, I. Rossetto, V. Rizzato, S. Stoffels, M. Van Hove, N. Posthuma, T.-L. Wu, D. Marcon, S. Decoutere, G. Meneghesso, and E. Zanoni, “Gate Stability of GaN-Based HEMTs with P-Type Gate,” Electronics, 2016.

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[J17] M. Meneghini, I. Rossetto, D. Bisi, M. Ruzzarin, M. Van Hove, S. Stoffels, T.-L. Wu, D. Marcon, S. Decoutere, G. Meneghesso, and E. Zanoni, “Negative bias-induced threshold voltage instability (NBTI) in GaN-on-Si power HEMTs,” IEEE Electron Device Letters, vol. 37, No. 4, pp. 474-477, Apr. 2016.

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[J16] T.-L. Wu, J. Franco, D. Marcon, B. Bakeroot, B. De Jaeger, S. Stoffels, M. Van Hove, G. Groeseneken, and S. Decoutere, “Towards Understanding Positive Bias Temperature Instability (PBTI) in Fully Recessed Gate GaN MIS-FETs,” IEEE Transactions on Electron Devices, vol. 63, no. 5, pp. 1853-1859, May 2016.

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[J15] G. Meneghesso, M. Meneghini, I. Rossetto, D. Bisi, T.-L. Wu, M. Van Hove, D. Marcon, S. Stoffels, S. Decoutere, and E. Zanoni, “Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate,” Microelectronics Reliability, vol. 58, pp. 151-157, Mar. 2016.

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[C22] T.-L. Wu, J. Franco, D. Marcon, B. De Jaeger, M. Van Hove, B. Bakeroot, S. Stoffels, G. Groeseneken, and S. Decoutere, “Positive Bias Temperature Instability (PBTI) Evaluation in Fully Recessed Gate GaN MIS-FETs,” in Proc. IEEE International Reliability Physics Symposium (IRPS), pp. 4A.2.1-2016. 4A.2.6, 2016.

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[C21] X. Kang, D. Wellekens, M. Van Hove, B. De Jaeger, N. Ronchi, T.-L. Wu, S. You, B. Bakeroot, J. Hu, X. Shi, D. Marcon, S. Stoffels, and S. Decoutere, “Device breakdown optimization of Al2O3/GaN MISFETs,” in Proc. IEEE International Reliability Physics Symposium (IRPS), pp. CD.5.1-CD.5.4, 2016.

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[C20] G. Meneghesso, M. Meneghini, I. Rossetto, V. Rizzato, S. Stoffels, M. Van Hove, T.-L. Wu, S. You, N. Posthuma, S. Decotere, and E. Zanoni, “Normally-off HEMTs with p-GaN Gate: Stability and Lifetime Extrapolation,” International Workshop on Nitride Semiconductors (IWN), October 2-7, Orlando, Florida 2016.

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[C19] I. Rossetto, M. Meneghini, V. Rizzato, S. Stoffels, M. Van Hove, N. Posthuma, T.-L. Wu, D. Marcon, S. Decoutere, G. Meneghesso and E. Zanoni , “Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis,” 27th European Symposium On Reliability Of Electron Devices, Failure Physics and Analysis (ESREF), Halle (Saale), Germany, 19-22 Sept., 2016.

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[C18] T.-L. Wu, D. Marcon, B. De Jaeger, N. Posthuma, B. Bakeroot, S. You, J. Franco, S. Stoffels, M. Van Hove, G. Groeseneken, and S. . Decoutere, “Gate stability of enhancement mode GaN power devices,” 12th INC global nanotechnology conference, Leuven, Belgium, 10-12 May, 2016.

 

2015

[J14] T.-L. Wu, D. Marcon, S. You, N. Posthuma, B. Bakeroot, S. Stoffels, M. Van Hove, G. Groeseneken, and S. Decoutere, “Forward Bias Gate Breakdown Mechanism in Enhancement-mode p-GaN gate AlGaN/GaN High-electron-mobility Transistors (HEMTs),” IEEE Electron Device Letters, vol. 36, no. 10, pp. 1001-1003, Oct. 2015. (Feature news in Semiconductor Todayhttp://goo.gl/heD788)

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[J13] I. Rossetto, M. Meneghini, D. Bisi, M. Van Hove, D. Marcon, T.-L. Wu, B. De Jaeger, S. Decoutere, G. Meneghesso, E. Zanoni, “Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs,”Microelectronics Reliability, vol. 55, pp. 1692-1696, 2015.

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[J12] D. Bisi, M. Meneghini, M. Van Hove, D. Marcon, S. Stoffels, T.-L. Wu, S. Decoutere, G. Meneghesso, and E. Zanoni, “Trapping mechanisms in GaN- based MIS-HEMTs grown on silicon substrate,” Physica Status Solidi A, pp. 1122-1129, Feb. 2015.

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[J11] N. Ronchi, B. De Jaeger, M. Van Hove, R. Roelofs, T.-L. Wu, J. Hu, X. Kang, and S. Decoutere. ”Combined PEALD gate-dielectric and in- situ SiN cap-layer for reduced Vth shift and RDS-ON dispersion of AlGaN/GaN HEMTs on 200 mm Si wafer,” Japanese Journal of Applied Physics, vol. 54, pp. 04DF02-1-04DF02-4, 2015.

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[J10] J. Hu, S. Stoffels, S. Lenci, T.-L. Wu, N. Ronchi, S. You, B. Bakeroot, G. Groeseneken, and S. Decoutere, “Study of Constant Voltage Off- state Stress on Au-free AlGaN/GaN Schottky Barrier Diodes,” Japanese Journal of Applied Physics, vol. 54, pp. 04DF07-1-04DF07-4, 2015.

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[J9] T.-L. Wu, D. Marcon, B. Bakeroot, B. De Jagger, HC Lin, J. Franco, S. Stoffels, M. Van Hove, R. Roelofs, G. Groeseneken, and S. Decoutere, “The Correlation of Interface states/border traps and threshold voltage shift on AlGaN/GaN MIS-HEMTs,” Applied Physics Letters, 107, pp. 093507-1-093507-5, Aug. 2015.

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[J8] T.-L. Wu, D. Marcon, N. Ronchi, B. Bakeroot, S. You, S. Stoffels, M. Van Hove, D. Bisi, M. Meneghini, G. Groeseneken, and S. Decoutere, “Analysis of Slow De-trapping Phenomena after a Positive Gate Bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 Bilayer Gate Dielectrics,” Solid-State Electronics, vol. 103, pp. 127-130, Jan. 2015.

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[C17] T.-L. Wu, D. Marcon, B. De Jaeger, M. Van Hove, B. Bakeroot, D. Lin, S. Stoffels, X. Kang, R. Roelofs, G. Groeseneken, and S. . Decoutere, “The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate,” in Proc. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 225-228, 2015.

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[C16] T.-L. Wu, D. Marcon, B. De Jaeger, M. Van Hove, B. Bakeroot, S. Stoffels, R. Roelofs, G. Groeseneken, and S. Decoutere, “Time Dependent Dielectric Breakdown (TDDB) Evaluation of PE-ALD SiN gate dielectrics of AlGaN/GaN recessed gate D-mode and E-mode MIS-HEMTs,” in Proc. IEEE International Reliability Physics Symposium (IRPS), pp. 6C.4.1-6C.4.6, 2015.

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[C15] D. Marcon, M. Van Hove, D. Wellekens, N. Posthuma, S. You, X. Kang, T.-L. Wu, M. Willems, S. Stoffels and S. Decoutere, “Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology,” in Proc. SPIE, Gallium Nitride Materials and Devices X, 936311, 2015.

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[C14] I. Rossetto, M. Meneghini, D. Bisi, M. Van Hove, D. Marcon, T.-L. Wu, B. De Jaeger, S. Decoutere, G. Meneghesso, E. Zanoni, “Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs,”26th European Symposium On Reliability Of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France, 05-09 Oct. 2015.

 

2014

[J7] B. Bakeroot, S. You, T.-L. Wu, J. Hu, M. Van Hove, B. De Jaeger, K. Geens, S. Stoffels, and S. Decoutere, “On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors,” Journal of Applied Physics, vol. 116, pp. 134506-1-134506-10, Oct. 2014.

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[J6] T.-L. Wu, D. Marcon, S. Stoffels, S. You, B. De Jaeger, M. Van Hove, G. Groeseneken, and S. Decoutere, “Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress," Microelectronics Reliability, vol. 54, pp. 120-124, Aug. 2014.

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[J5] M. Meneghini, D. Bisi, D. Marcon, S. Stoffels, M. Van Hove, T.-L. Wu, S. Decoutere, G. Meneghesso, and E. Zanoni, “Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons," Applied Physics Letters, vol. 104, pp. 143505-1-143505-4, Apr. 2014.

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[J4] M. Meneghini, D. Bisi, D. Marcon, S. Stoffels, M. Van Hove, T.-L. Wu, S. Decoutere, G. Meneghesso, and E. Zanoni, “Trapping and Reliability assessment in d-mode GaN-based MIS-HEMTs for Power Applications," IEEE Transactions on Power Electronics, vol. 29, no. 5, pp. 2199-2207, May 2014.

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[C13] D. Marcon, M. Van Hove, B. De Jaeger, D. Wellekens, N. Posthuma, S. You, B. Bakeroot, X. Kang, T.-L Wu, M. Willems, S. Stoffels and S. Decoutere, “200mm GaN-on-Si Status : Comparison of e-Mode p-GaN and Recessed MISHEMT Devices,”Asia-Pacific Microwave Conference (APMC), Sendai, Japan, 4-7 Nov. 2014.

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[C12] N. Ronchi, B. De Jaeger, M. Van Hove, R. Roelofs, T.-L. Wu, J. Hu, X. Kang, and S. Decoutere. ”Combined PEALD gate-dielectric and in- situ SiN cap-layer for reduced Vth shift and RDS-ON dispersion of AlGaN/GaN HEMTs on 200 mm Si wafer," 46th International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, 8-11 Sept. 2014.

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[C11] J. Hu, S. Stoffels, S. Lenci, T.-L. Wu, N. Ronchi, S. You, B. Bakeroot, G. Groeseneken, and S. Decoutere, “Study of Constant Voltage Off- state Stress on Au-free AlGaN/GaN Schottky Barrier Diodes," 46th International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, 8-11 Sept. 2014.

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[C10] M. Meneghini, D. Bisi, D. Marcon, M. Van Hove, T.-L. Wu, S. Decoutere, G. Meneghesso, and E. Zanoni, “Investigation of the impact of hot electrons and high drain bias on the dynamic Ron increase in GaN-based MIS-HEMTs grown on silicon," International Workshop on Nitride Semiconductors (IWN), Wroclaw, Poland, 19-24 Aug. 2014.

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[C9] T.-L. Wu, D. Marcon, S. Stoffels, S. You, B. De Jaeger, M. Van Hove, G. Groeseneken, and S. Decoutere, “Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress," 25th European Symposium On Reliability Of Electron Devices, Failure Physics and Analysis (ESREF), Berlin, Germany, 29. Sept- 02. Oct., 2014.

 

2013

[J3] D. Marcon, G. Meneghesso, T.-L. Wu, S. Stoffels, M. Meneghini, E. Zanoni, and S. Decoutere, “Reliability analysis of permanent degradations on AlGaN/GaN HEMTs,”IEEE Transactions on Electron Devices, vol. 60, no. 10, pp. 3132-3141, Oct. 2013.

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[C8] T.-L. Wu, D. Marcon, M. Zahid, M. Van Hove, S. Decoutere, and G. Groeseneken, “Comprehensive investigation of on-state stress on D-mode AlGaN/GaN MIS-HEMTs ," in Proc. IEEE International Reliability Physics Symposium (IRPS), pp. 3C.5.1-3C.5.7, 2013.

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[C7] M. Meneghini, D. Bisi, D. Marcon, S. Stoffels, M. Van Hove, T.-L. Wu, S. Decoutere, G. Meneghesso, and E. Zanoni, “Ron collapse, breakdown and degradation of d-mode MIS-HEMTs based on GaN on Si technology," 10th International Conference on Nitride Semiconductors (ICNS). Washington DC, USA, 25-30 Aug. 2013.

 

2012

[C6] D. Wellekens, R. Venegas, X. Kang, M. Zahid, T.-L. Wu, D. Marcon, P. Srivastava, M. Van Hove, and S. Decoutere, “High Temperature Behavior of GaN -on-Si High Power MISHEMT Devices," in Proc. 42th European Solid-State Device Conference (ESSDERC), pp. 302-305, 2012.

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[C5] T.-L. Wu, D. Marcon, M. Zahid, M. Van Hove, S. Stoffels, P. Srivastava, S. Decoutere, and G. Groeseneken, “Forward Gate Bias On-State Stress on AlGaN/GaN MIS -HEMTS for Power Switching Applications," 36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Island of Porquerolles, France, 28-30 May, 2012.

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[C4] M. Zahid, D. Marcon, M. Van Hove, T.-L. Wu, and S. Decoutere, “Lifetime investigation of Si3N4/Al2O3 as gate dielectric for AlGaN/GaN MIS-HEMTs studied with Time Dependent Dielectric Breakdown," 36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Island of Porquerolles, France, 28-30 May, 2012.

 

2011

[J2]T.-L. Wu, C.-F. Huang, and C.-H. Cheng, “Characteristics of 4H-SiC RF MOSFETs on a Semi-Insulating Substrate,”ECS Trans., vol. 35, pp. 173-183, 2011.

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[C3] T.-L. Wu, C.-H. Cheng, and C.-F. Huang, “Characteristics of 4H-SiC MOSFETs Using Low-Temperature Oxide,”220th ECS meeting, Boston, Massachusetts, USA, 9-14. Oct., 2011

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[C2] T.-L. Wu, C.-F. Huang, and C.-H. Cheng, “A Study of 4H-SiC RF MOSFETs on a Semi-Insulating Substrate,”219th ECS meeting, Montreal, Canada, 1-6. May, 2011.

 

2009

[J1] C.-F. Huang, C.-L. Kan, T.-L. Wu, M.-C. Lee, Y.-Z. Liu, K.-Y. Lee, and F. Zhao, “3510-V 390-4H-SiC Lateral JFET on a Semi-Insulating Substrate,”IEEE Electron Device Letters, vol. 30, no. 9, pp. 957-959, Sept. 2009.

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[C1] C.-F. Huang, C.-L. Kan, T.-L. Wu, M.-C. Lee, Y.-Z. Liu, K.-Y. Lee, and F. Zhao, “High&nbsp; Voltage Lateral 4H-SiC JFETs on a Semi-insulating Substrate,” in Proc. 67th Device Research&nbsp; &nbsp; Conference, University Park, PA, 22-24 June, 2009.

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