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Open course: Next-generation power conversion technologies: GaN and SiC power semiconductors

Ewant育網平台課程註冊

Lecture Videos  

Semiconductor Physics and Devices (I) 

2023 Spring Lecture Videos 

2022 Spring Lecture Videos 

2021 Spring

2020 Spring

2019 Spring

2018 Spring 

2017 Spring 

Reliability and Failure Physics of Semiconductor Devices

2023 Fall  Lecture Videos 

2022 Fall  Lecture Videos 

2021 Fall

2020 Fall

2019 Fall 

2018 Fall 

2017 Fall 

Power semiconductor devices: Device design, Characteristics, and Reliability

*Note: This course will be lectured biannually (Next term: 2022 Spring)

2020 Spring

2018 Spring

2017 Spring

2016 Spring

Short Course :

2023 Summer GaN/SiC compound semiconductors 

2022 Summer High power/High frequency GaN technologies

2021 Summer Wide bandgap power device technologies 

2020 Summer Wide bandgap GaN power devices 

2019 Summer GaN power device 

From mobile phones and computers to electric cars and solar panels, power electronics are everywhere. The key to power electronics is power semiconductor components, which dominate the efficiency and operating speed of energy conversion. Traditional power semiconductors based on silicon are limited by material properties and have great bottlenecks in energy conversion efficiency and operating frequency. In recent years, gallium nitride (GaN) and silicon carbide (SiC) semiconductor materials have received great attention.
Due to its excellent material properties, it can greatly improve energy conversion efficiency and operating frequency, and is therefore gradually being widely used in applications such as fast charging and electric vehicles. This course will introduce the properties of GaN and SiC semiconductor materials, and briefly introduce the structure and operating principle of GaN and SiC power devices.

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