WLab
Advance Semiconductor Technologies
toward Reliability
Open course: Next-generation power conversion technologies: GaN and SiC power semiconductors
Semiconductor Physics and Devices (I)
2018 Spring
2017 Spring
Reliability and Failure Physics of Semiconductor Devices
2019 Fall
2018 Fall
2017 Fall
Power semiconductor devices: Device design, Characteristics, and Reliability
*Note: This course will be lectured biannually (Next term: 2022 Spring)
2017 Spring
2016 Spring
Short Course :
2023 Summer GaN/SiC compound semiconductors
2022 Summer High power/High frequency GaN technologies
2021 Summer Wide bandgap power device technologies
2020 Summer Wide bandgap GaN power devices
2019 Summer GaN power device
From mobile phones and computers to electric cars and solar panels, power electronics are everywhere. The key to power electronics is power semiconductor components, which dominate the efficiency and operating speed of energy conversion. Traditional power semiconductors based on silicon are limited by material properties and have great bottlenecks in energy conversion efficiency and operating frequency. In recent years, gallium nitride (GaN) and silicon carbide (SiC) semiconductor materials have received great attention.
Due to its excellent material properties, it can greatly improve energy conversion efficiency and operating frequency, and is therefore gradually being widely used in applications such as fast charging and electric vehicles. This course will introduce the properties of GaN and SiC semiconductor materials, and briefly introduce the structure and operating principle of GaN and SiC power devices.