IRPS 2026: WLab Sets a New Record with 6 Accepted Papers, Spotlighting Reliability Mechanisms in Next-Generation Devices

From SiC to Power GaN, and further to RF GaN and Ferroelectric device reliability, WLab has long been dedicated to reliability research. We continuously explore innovative reliability testing methodologies and the underlying degradation/failure mechanisms, aiming to develop practical strategies to overcome reliability limitations in next-generation compound semiconductors and emerging memory technologies.

📣 Great news!

WLab has 6 papers accepted to the 2026 IEEE International Reliability Physics Symposium (IRPS), spanning:• SiC• Power GaN• RF GaN• Ferroelectric technologies

This marks our highest number of IRPS acceptances to date, and also the first time we systematically present SiC / GaN / Ferroelectric reliability studies within the same IRPS edition.

🔍 Why IRPS matters

IRPS is one of the most influential international conferences in semiconductor reliability and failure physics, covering reliability topics from materials, processes, and devices to system-level impacts (e.g., CMOS, memory, SiC, GaN, RF devices, advanced packaging, and emerging materials).More importantly, IRPS emphasizes a physics-driven approach—going beyond measurement results to focus on degradation origins, failure pathways, and predictive models. Many industry reliability standards, test methods, and lifetime models were first introduced and validated through IRPS.

We will continue advancing reliability physics and look forward to sharing our latest insights with the global community at IRPS 2026.

Accepted papers at IRPS 2026 (6 papers)

Ferroelectric / Compute-in-Memory[1] 

H.-Y. Liu, W.-C. Peng, C.-Y. Lin, T.-L. Wu,“Investigation of Read-Speed Limitation and Switching Dynamics of Ferroelectric Capacitors for Capacitor-Mode Compute-in-Memory Applications,” IRPS 2026.

➡️ Focuses on FeCAP read-speed limits and switching dynamics relevant to CiM applications.

Power GaN / Switching Reliability[2] 

P.-J. Wang, C.-C. Lee, Z.-H. Huang, Y.-T. Lee, T.-L. Wu,“Gate Trapping-Induced Dynamic RON Degradation in p-GaN Power HEMTs under Continuous Hard Switching,” IRPS 2026.

➡️ Investigates dynamic RON degradation driven by gate trapping under continuous hard switching.

RF GaN / Gate Breakdown & MIS Reliability[3] 

A. Navolotskaia, H. Yu, Y.-C. Kuo, Y. Yang, C.-Y. Huang, W.-T. Lin, Y. Chong, B. O'Sullivan, A. Rathi, A. Gupta, A. Alian, U. Peralagu, B. Parvais, N. Collaert, T.-L. Wu,“Understanding Gate Breakdown Mechanisms in RF GaN MISHEMTs with Thin Gate SiN,” IRPS 2026.

➡️ Explores gate breakdown mechanisms in RF GaN MISHEMTs with thin SiN gate.

GaN-on-Si / Dynamic On-State Breakdown[4] H. Yu, A. Gupta, Y.-C. Kuo, Y. Chong, T.-L. Wu, S. Yadav, R. ElKashlan, S. Banerjee, A. Rathi, W.-M. Wu, B. Kazemi Esfeh, E. Bury, B. Vermeersch, B. O’Sullivan, A. Alian, M. Asad, U. Peralagu, B. Parvais, N. Collaert,“Dynamic On-State Breakdown of GaN-on-Si HEMT,” IRPS 2026.

➡️ Focuses on dynamic on-state breakdown behavior and reliability risks in GaN-on-Si HEMTs.

SiC MOSFET / Charge Pumping & Gate Current Behavior[5] W.-C. Lin, Y.-J. Chiu, S. Soo, G.-H. Liu, S. Elangovan, S.-S. Yeh, C.-L. Hung, Y.-K. Hsiao, H.-C. Kuo, T.-L. Wu,“Toward Understanding Non–Impact-Ionization-Induced Time-Dependent Gate Current Decrease in 4H-SiC MOSFETs via Charge Pumping,” IRPS 2026.

➡️ Uses charge pumping to study time-dependent gate current decrease in 4H-SiC MOSFETs.

GaN SBD / 650 V / p-GaN Edge Termination[6] C.-Y. Chang, Y.-T. Tso, C.-W. Hsiung, Y.-C. Peng, T.-S. Huang, M.-J. Tsai, M.-C. Tsou, M.-N. Chuang, T.-L. Wu,“Enhancing VF and RON Stability in 650-V AlGaN/GaN Schottky Barrier Diode with Anode p-GaN Edge Termination on GaN-on-Si Platform,” IRPS 2026.

➡️ Targets VF and RON stability in 650-V GaN SBDs using anode p-GaN edge termination on GaN-on-Si.